www.irf.com 1 irf7470 smps mosfet hexfet power mosfet v dss r ds(on) max i d 40v 13m ? 10a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a absolute maximum ratings symbol parameter max. units v ds drain-source voltage 40 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 10v 10 i d @ t a = 70c continuous drain current, v gs @ 10v 8.5 a i dm pulsed drain current 85 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0. 02 w/c t j , t stg junction and storage temperature range -55 to + 150 c high frequency dc-dc converters with synchronous rectification applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current
irf7470 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.80 1.3 v t j = 25c, i s = 8.0a, v gs = 0v ??? 0.65 ??? t j = 125c, i s = 8.0a, v gs = 0v t rr reverse recovery time ??? 72 110 ns t j = 25c, i f = 8.0a, v r = 20v q rr reverse recovery charge ??? 130 200 nc di/dt = 100a/s t rr reverse recovery time ??? 76 110 ns t j = 125c, i f = 8.0a, v r =20v q rr reverse recovery charge ??? 150 230 nc di/dt = 100a/s s d g diode characteristics 2.3 85 v sd diode forward voltage dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 300 mj i ar avalanche current ??? 8.0 a avalanche characteristics static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.04 ??? v/c reference to 25c, i d = 1ma ??? 9.0 13 v gs = 10v, i d = 10a ??? 10 15 m ? v gs = 4.5v, i d = 8.0a ??? 14.5 30 v gs = 2.8v, i d = 5.0a v gs(th) gate threshold voltage 0.8 ??? 2.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 32v, v gs = 0v ??? ??? 100 v ds = 32v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v symbol parameter min. typ. max. units conditions g fs forward transconductance 27 ??? ??? s v ds = 20v, i d = 8.0a q g total gate charge ??? 29 44 i d = 8.0a q gs gate-to-source charge ??? 7.9 12 nc v ds = 20v q gd gate-to-drain ("miller") charge ??? 8.0 12 v gs = 4.5v q oss output gate charge ??? 23 35 v gs = 0v, v ds = 16v t d(on) turn-on delay time ??? 10 ??? v dd = 20v t r rise time ??? 1.9 ??? i d = 8.0a t d(off) turn-off delay time ??? 21 ??? r g = 1.8 ? t f fall time ??? 3.2 ??? v gs = 4.5v c iss input capacitance ??? 3430 ??? v gs = 0v c oss output capacitance ??? 690 ??? v ds = 20v c rss reverse transfer capacitance ??? 41 ??? pf ? = 1.0mhz
irf7470 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 2.0 2.2 2.4 2.6 2.8 3.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 10a
irf7470 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 50 60 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 8.0a v = 20v ds v = 32v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
irf7470 www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 6. on-resistance vs. drain current fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
irf7470 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.6a 6.4a 8.0a 2 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0.010 0.012 0.014 0.016 0.018 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 10a 0 102030405060 i d , drain current (a) 0.010 0.015 0.020 0.025 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v v gs = 2.7v v gs = 10v
irf7470 www.irf.com 7 so-8 package details k x 45 c 8x l 8x h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1 so-8 part marking
irf7470 8 www.irf.com
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 9.4mh r g = 25 ? , i as = 8.0a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/03
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